MODELLING OF DOUBLE DIFFUSED TRANSISTORS: DOUBLE EXPONENTIAL DISTRIBUTION OF IMPURITY PROFILESRUSTAGI SC; CHATTOPADHYAYA SK.1979; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1979; VOL. 17; NO 3; PP. 166-170; BIBL. 7 REF.Article

IMPURITY PROFILE ON GAP DIODES IN THE NEIGHBOURHOOD OF A P-N JUNCTIONOELGART G; ARNOLD G.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. 609-618; ABS. GER; BIBL. 19 REF.Article

ETUDE THEORIQUE DES GENERATEURS A DIODES A TRANSFERT ELECTRONIQUE INTER-VALLEESPORESH SB; TAGER AS.1978; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1978; VOL. 23; NO 4; PP. 834-840; BIBL. 13 REF.Article

IDEAL FET DOPING PROFILETEMPLE VAK.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 619-626; BIBL. 8 REF.Article

BASE COMPONENT OF GAIN AND DELAY TIME IN BASE-IMPLANTED BIPOLAR TRANSISTORSELMASRY MI; ROULSTON DJ.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 371-375; BIBL. 15 REF.Article

CARRIER PROFILING OF INP.LILE DL; COLLINS DA.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 15; PP. 457-458; BIBL. 4 REF.Article

INFLUENCE OF AN IMPURITY PROFILE ON THE DETERMINATION OF INTERFACE STATESFELTIL H.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 10; PP. 1227-1230; BIBL. 15 REF.Article

LOW-NOISE GAAS FET'S PREPARED BY ION IMPLANTATIONHIGGINS JA; KUVAS RL; EISEN FH et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 587-596; BIBL. 24 REF.Article

NEW CONTACT RESISTANCE PROFILING METHOD FOR THE ASSESSMENT OF III-V ALLOY MULTILAYER STRUCTURES.GOODFELLOW RC; CARTER AC; DAVIS R et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 11; PP. 328-330; BIBL. 3 REF.Article

I.V. IMPURITY PROFILING WITH A SCHOTTKY BARRIER.SHANNON JM.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 10; PP. 707-709; BIBL. 6 REF.Article

THE EFFECT OF DOPANT DISTRIBUTION AND BUILT-IN ELECTRIC FIELD ON THE TRANSIT TIME OF A TRANSISTORCHOWDHURY NKD; GHOSH K; BISWAS TB et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 3; PP. 293-295; BIBL. 10 REF.Article

AN INVESTIGATION OF THE VOLTAGE SUSTAINED BY EPITAXIAL BIPOLAR TRANSISTORS IN CURRENT MODE SECOND BREAKDOWNDUNN I; NUTTALL KI.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 4; PP. 353-372; BIBL. 14 REF.Article

CURRENT AND BASE TRANSIT-TIME RELATIONS IN NORMAL AND INVERTED (IIL) BIPOLAR TRANSISTORS.ELSAID MH; ROULSTON DJ; WATT LAK et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 761-763; BIBL. 3 REF.Article

EFFECT OF THE DRAIN-SOURCE VOLTAGE ON DOPANT PROFILES OBTAINED FROM THE DC MOSFET PROFILE METHOD = EFFET DE LA TENSION SOURCE-PUITS SUR LES PROFILS DE DOPAGE OBTENUS PAR LA METHODE DU PROFIL MOSFET EN COURANT CONTINUBUEHLER MG.1980; IEEE TRANS-ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2273-2279; BIBL. 10 REF.Article

SURFACE DEPLETION AND INVERSION IN SEMICONDUCTORS WITH ARBITRARY DOPANT PROFILESBARTELINK DJ.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 220-923; BIBL. 9 REF.Article

CALCUL ANALYTIQUE DU FACTEUR DE BRUIT D'UNE DIODE DE GUNN EN TENANT COMPTE DE LA 2EME CONDITION LIMITE SUR L'ANODE ET DE L'IRREGULARITE DU PROFIL DU DOPAGEZATSEPIN EN; MURAV'EV VV.1980; VESCI AKAD. NAVUK BSSR, SER. FIZ.-TEH. NAVUK; ISSN 0002-3566; BYS; DA. 1980; NO 4; PP. 123-124Article

SUBTHRESHOLD BEHAVIOR OF UNIFORMLY AND NONUNIFORMLY DOPED LONG-CHANNEL MOSFETBREWS JR.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 9; PP. 1282-1291; BIBL. 22 REF.Article

PROBLEMS IN ELEMENTAL CONCENTRATION DEPTH PROFILING WITH AN ION MICROPROBE.SCHILLING JH; BUGER PA.1978; INTERNATION. J. MASS SPECTROM. ION PHYS.; NETHERL.; DA. 1978; VOL. 26; NO 2; PP. 163-172; BIBL. 20 REF.Article

PROFILE DESIGN FOR DISTORTION REDUCTION IN MICROWAVE FIELD-EFFECT TRANSISTORS.PUCEL RA.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 6; PP. 204-206; BIBL. 5 REF.Article

DETERMINATION OF DOPANT PROFILES BY VOLTAGE MEASUREMENTS.LEHOVEC K; CHIH HONG CHEN.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 284-286; BIBL. 10 REF.Article

EFFECTS OF DOPING PROFILE ON THE PERFORMANCE OF BARITT DEVICES.HIEN NGUYENBA; HADDAD GI.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 9; PP. 1154-1163; BIBL. 9 REF.Article

CALCULATIONS OF SUSTAINING VOLTAGE IN SILICON BI-POLAR TRANSISTORS.RABURN WD; CAUSEY WH.1975; MICROELECTRONICS; G.B.; DA. 1975; VOL. 6; NO 3; PP. 4-6; BIBL. 5 REF.Article

OPTIMUM DOPING PROFILE OF POWER MOSFET EPITAXIAL LAYERXING BI CHEN; CHENMING HU.1982; IEEE TRANS. ACOUST. SPEECH SIGNAL PROCESS.; ISSN 0096-3518; USA; DA. 1982; VOL. 29; NO 6; PP. 985-987; BIBL. 7 REF.Article

COMPARISON OF THAI'S THEORY WITH EXPERIMENTAL BORON DOPING PROFILES IN SILICON, DIFFUSED FROM BORON NITRIDE SOURCESFROHMADER KP; BAUMBAUER L.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1263-1265; BIBL. 17 REF.Article

DESIGN CONSIDERATIONS FOR GAAS HIGH-LOW IMPATT DIODESCLAASSEN M; KVEPPER P; HARTH W et al.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 44; NO 2; PP. 145-150; BIBL. 15 REF.Article